BF1214 NXP Semiconductors, BF1214 Datasheet - Page 14

• Manufacturer Part Number: BF1214
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 11.
V
Table 12.
V
9. Test information
BF1214_1
Product data sheet
f (MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
DS(B)
DS(B)
Fig 24. Cross modulation test setup (for one MOSFET)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.9836
0.9890
0.9869
0.9801
0.9704
0.9595
0.9458
0.9300
0.9132
0.8959
0.8775
Scattering parameters for amplifier B
Noise data for amplifier B
11
G2-S
G2-S
8.3.1 Scattering parameters for amplifier B
8.3.2 Noise data for amplifier B
= 4 V; I
= 4 V; I
NF
0.91
1.24
D(B)
D(B)
min
Angle
(deg)
2.92
7.68
15.32
23.00
30.69
38.13
45.45
52.67
59.82
66.74
73.43
= 18 mA; V
= 18 mA; T
(dB)
R GEN
50
V I
s
Magnitude
(ratio)
3.06
3.06
3.03
2.99
2.94
2.88
2.81
2.73
2.65
2.56
2.47
21
amb
DS(A)
R2
50
= 25 C; typical values.
4.7 nF
= 0 V; V
C2
Rev. 01 — 30 October 2007
(ratio)
0.76
0.71
opt
V
V
AGC
GG
G1-S(A)
R1
10 k
R G1
Angle
(deg)
176.89
171.63
163.14
154.74
146.34
138.13
129.99
121.93
114.01
106.18
98.51
4.7 nF
C1
= 0 V; T
s
Magnitude
(ratio)
0.0005
0.0012
0.0023
0.0034
0.0045
0.0056
0.0066
0.0075
0.0085
0.0093
0.0101
12
amb
DUT
V
= 25 C; typical values.
DS
(deg)
22.58
47.34
L1
2.2 H
4.7 nF
4.7 nF
C3
C4
Dual N-channel dual gate MOSFET
Angle
(deg)
89.71
92.19
88.94
87.64
86.52
85.29
84.60
83.78
82.86
81.97
80.62
001aad926
R L
50
s
Magnitude
(ratio)
0.9897
0.9920
0.9914
0.9902
0.9889
0.9869
0.9845
0.9818
0.9786
0.9750
0.9717
22
r
0.690
0.620
n
(ratio)
© NXP B.V. 2007. All rights reserved.
BF1214
Angle
(deg)
0.98
2.79
5.62
8.42
11.21
14.01
16.81
19.64
22.44
25.22
28.10
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