BF1214 NXP Semiconductors, BF1214 Datasheet - Page 9

• Manufacturer Part Number: BF1214
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1214_1
Product data sheet
Fig 10. Amplifier A: typical gain reduction as a function
Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values
reduction
gain
(dB)
10
20
30
40
50
0
V
R
see
of the AGC voltage; typical values
V
0
DS(A)
DS(A)
G1(A)
Figure
= 5 V; V
= 5 V; V
= 68 k ; f
8.2 Graphs for amplifier A
24.
1
GG
GG
w
= 5 V; I
= 5 V; V
= 50 MHz; T
2
D(nom)(A)
G2-S(nom)
(mA)
amb
I
D
30
20
10
= 18 mA;
0
= 25 C;
3
= 4 V; R
0
V
001aah001
AGC
(V)
G1(A)
10
Rev. 01 — 30 October 2007
4
= 68 k ; f
20
w
= 50 MHz; I
Fig 11. Amplifier A: unwanted voltage for 1 %
30
(dB V)
V
unw
110
100
90
80
gain reduction (dB)
V
R
I
cross modulation as a function of gain
reduction; typical values
D(nom)(A)
0
DS(A)
G1(A)
40
D(nom)(A)
001aah003
= 5 V; V
= 68 k ; f
= 18 mA; T
10
= 18 mA; T
50
Dual N-channel dual gate MOSFET
GG
w
= 5 V; V
= 50 MHz; f
20
amb
amb
= 25 C; see
= 25 C; see
G2-S(nom)
30
unw
= 60 MHz;
gain reduction (dB)
= 4 V;
© NXP B.V. 2007. All rights reserved.
40
Figure
001aah002
Figure
BF1214
24.
24.
50
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