STM8L152C8 STMicroelectronics, STM8L152C8 Datasheet - Page 116

• Manufacturer Part Number: STM8L152C8
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L152C8

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temp. Range: −40 to 85, 105 or 125 °C
• 5 Low Power Modes: Wait, Low power run (5.9 μA), Low power wait (3 μA), Active-halt with full RTC (1.4 μA), Halt (400 nA)
• Dynamic Power Consumption: 200 μA/MHz+330 μA
• Ultra Low Leakage Per I/0: 50 nA
• Max Freq: 16 MHz, 16 CISC MIPS peak
• Lcd: 8x40 or 4x44 w/ step-up converter

Electrical parameters
9.3.15
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EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 57.
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC61967-2 which specifies the board and the loading of each pin.
Symbol
V
V
FESD
EFTB
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
Fast transient voltage burst limits
to be applied through 100 pF on
V
functional disturbance
DD
EMS data
and V
SS
Parameter
pins to induce a
Doc ID 17943 Rev 4
V
f
conforms to IEC 61000
V
f
conforms to IEC 61000
CPU
CPU
DD
DD
16 MHz,
3.3 V, T
3.3 V, T
16 MHz,
A
A
+25 °C,
+25 °C,
Conditions
STM8L15xx8, STM8L15xR6
Using HSI
Using HSE
DD
and V
Level/
Class
2B
4A
2B
SS