STM8L152C8 STMicroelectronics, STM8L152C8 Datasheet - Page 117

• Manufacturer Part Number: STM8L152C8
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L152C8

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temp. Range: −40 to 85, 105 or 125 °C
• 5 Low Power Modes: Wait, Low power run (5.9 μA), Low power wait (3 μA), Active-halt with full RTC (1.4 μA), Halt (400 nA)
• Dynamic Power Consumption: 200 μA/MHz+330 μA
• Ultra Low Leakage Per I/0: 50 nA
• Max Freq: 16 MHz, 16 CISC MIPS peak
• Lcd: 8x40 or 4x44 w/ step-up converter

STM8L15xx8, STM8L15xR6
Table 58.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 59.
1. Data based on characterization results, not tested in production.
Static latch-up
●
Table 60.
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Symbol
LU
Peak level
EMI data
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Parameter
Static latch-up class
(1)
Ratings
V
T
LQFP80
conforming to
IEC61967-2
A
DD
+25 °C,
3.6 V,
Conditions
Doc ID 17943 Rev 4
Parameter
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
T
A
+25 °C
Electrical parameters
Max vs.
16 MHz
Maximum
value
1.5
10
4
2000
1
Class
750
II
(1)
117/126
dBV
Unit
Unit
V
-