BUT11AX NXP Semiconductors, BUT11AX Datasheet - Page 4

• Manufacturer Part Number: BUT11AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1995
Silicon Diffused Power Transistor
Fig.8. Reverse bias safe operating area. T
Fig. 7. Normalised power derating and second
120
110
100
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
10
0
1
0
IC / A
0.01
0
%
h
FE
Fig.9. Typical DC current gain.
20
h
FE
breakdown curves.
0.1
= f(I
40
400
C
); parameter V
P tot
60
VCE / V
Ths / C
IC / A
1V
1
80
5V
800
with heatsink compound
Normalised Derating
100
10
CE
BUT11AX
120
BUT11AX
140
1200
j
100
T
j max
4
Fig.10. Forward bias safe operating area. T
(1)
(2)
I
II
III
NB:
0.01
100
0.1
10
1
1
IC / A
ICM max
IC max
P
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
Mounted with heatsink compound and
30
envelope.
tot
BE
max and P
5 newton force on the centre of the
100
10
(1)
I
and t
tot
= 0.01
peak max lines.
p
100
(2)
II
0.6 s.
Product specification
V
CE
/ V
III
BUT11AX
1000
10 us
tp =
100 us
1 ms
10 ms
500 ms
DC
hs
Rev 1.100
25 ˚C