BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 10

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Impedance measured at reference planes.
Fig.14 Input impedance as a function of frequency
DS
( )
50
input
Z i
= 26 V; I
12
4
0
4
8
800
(series components); typical values.
L1
DQ
V gate
= 85 mA; P
C1
900
C19
L
= 10 W; T
x i
r i
1000
L2
C18
h
R2
C16
C2
25 C.
1100
Fig.16 Class-AB test circuit for 960 MHz.
C17
f (MHz)
MGW654
R1
L3
1200
C4
L4
L5
L6
C3
L10
10
L7
handbook, halfpage
V
Impedance measured at reference planes.
Fig.15 Load impedance as a function of frequency
DS
C5
( )
Z L
= 26 V; I
10
8
6
4
2
0
L11
800
(series components); typical values.
L8
C6
DQ
= 85 mA; P
900
C7
L12
L
= 10 W; T
C8
1000
C15
C9
R L
X L
L9
h
MGW656
25 C.
C14
C10
output
50
BLF1822-10
Product specification
1100
f (MHz)
C13
C11
MGW655
1200
C12
V DD