BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 2

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
QUICK REFERENCE DATA
RF performance at T
2003 Feb 10
CW, class-AB (2-tone)
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Typical 2-tone performance at a supply voltage of 26 V
and I
– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim = 31 dBc at 900 MHz, 28 dBc at 2200 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)
No internal matching for broadband operation.
RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range
Broadcast drivers.
UHF power LDMOS transistor
OPERATION
MODE OF
DQ
of 85 mA:
h
= 25 C in a common source test circuit.
f
f
1
1
= 2200; f
= 960; f
(MHz)
2
f
2
= 960.1
= 2200.1
V
(V)
26
26
DS
CAUTION
(mA)
I
85
85
DQ
2
PINNING - SOT467C
10 (PEP) >11; typ. 13.5 >30; typ. 34
10 (PEP)
(W)
P
L
PIN
1
2
3
typ. 18.5
Fig.1 Simplified outline.
(dB)
Top view
G
p
drain
gate
source, connected to flange
1
2
DESCRIPTION
typ. 39
(%)
MBK584
Product specification
D
3
BLF1822-10
26; typ. 28
typ. 33
(dBc)
d
im