BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 6

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Impedance measured at reference planes.
Fig.8
DS
( )
Z i
50
input
= 26 V; I
8
6
4
2
0
1.8
Input impedance as a function of frequency
(series components); typical values.
V gate
L1
DQ
= 85 mA; P
1.9
C1
C2
L
C6
= 10 W; T
C3
L2
2.0
x i
r i
h
R1
L3
25 C.
2.1
C4
Fig.10 Class-AB test circuit for 2.2 GHz.
f (GHz)
MGW648
L4
2.2
C5
L5
6
handbook, halfpage
C7
V
Impedance measured at reference planes.
Fig.9
DS
( )
Z L
C11
= 26 V; I
L6
C8
6
4
2
0
2
4
6
L9
1.8
Load impedance as a function of frequency
(series components); typical values.
DQ
C12
L7
C9
L10
= 85 mA; P
C10
1.9
L8
C18
C13
L
MGW650
= 10 W; T
output
50
2.0
C19
C14
h
25 C.
BLF1822-10
Product specification
C20
C15
2.1
R L
X L
f (GHz)
MGW649
C16
V DD
2.2
C17