BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 5

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.4
V
f
Fig.6
1
1
DS
DS
(dBc)
(dBc)
= 2000 MHz; f
= 2200 MHz; f
d im
d im
= 26 V; I
= 26 V; I
20
40
60
80
20
40
60
80
0
0
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
DQ
= 85 mA; T
= 85 mA; T
2
2
= 2000.1 MHz.
= 2200.1 MHz.
4
4
h
h
25 C;
25 C;
8
8
d 3
d 5
d 7
d 3
d 5
d 7
P L (PEP) (W)
P L (PEP) (W)
12
12
MGW644
MGW646
16
16
5
handbook, halfpage
handbook, halfpage
V
f
Fig.5
V
f
(1) I
Fig.7
1
1
DS
DS
(dBc)
= 2200 MHz; f
= 2200 MHz; f
(dB)
d 3
G p
= 26 V; I
= 26 V; T
20
40
60
DQ
15
10
0
5
0
0
0
= 115 mA.
Power gain and efficiency as functions of
peak envelope load power; typical values.
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
h
= 85 mA;
2
2
25 C;
= 2200.1 MHz.
= 2200.1 MHz.
4
4
(2) I
G p
DQ
= 55 mA.
(1)
(2)
(3)
8
8
P L (PEP) (W)
P L (PEP) (W)
BLF1822-10
Product specification
(3) I
12
12
DQ
D
MGW645
MGW647
= 85 mA.
16
16
60
40
20
0
(%)
D