BLF2022-120 NXP Semiconductors, BLF2022-120 Datasheet - Page 3

• Manufacturer Part Number: BLF2022-120
• Description: Uhf Push-pull Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
CHARACTERISTICS
T
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Mar 07
R
R
Per section
V
V
I
I
I
g
R
C
2-tone, class-AB
SYMBOL
SYMBOL
MODE OF OPERATION
j
DSS
DSX
GSS
fs
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C unless otherwise specified.
DSon
rss
UHF push-pull power LDMOS transistor
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
DS
f
1
= 28 V; f = 2170 MHz, P
= 2170; f
PARAMETER
(MHz)
f
2
= 2170.1
V
V
V
V
V
V
V
V
note 1
GS
DS
GS
GS
GS
DS
GS
GS
L
V
(V)
= 120 W (CW).
28
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= V
= 15 V; V
= V
= 0; V
DS
h
= 25 C; R
3
GSth
GSth
CONDITIONS
D
DS
DS
= 1.4 mA
2 x 500
+ 9 V; V
+ 9 V; V
D
D
(mA)
= 26 V
= 26 V; f = 1 MHz;
P
I
= 140 mA
= 5 A
DS
DQ
L
th mb-h
= 120 W; T
= 0
DS
DS
120 (PEP)
= 0.65 K/W, unless otherwise specified.
= 10 V
= 5 V
CONDITIONS
(W)
P
mb
L
= 50 C; note 1
65
4.4
18
MIN.
(dB)
>11
G
p
4.2
0.15
3.4
Preliminary specification
TYP.
BLF2022-120
>30
(%)
VALUE
D
0.35
0.15
5.5
10
25
MAX.
(dBc)
V
V
A
nA
S
pF
UNIT
d
K/W
K/W
UNIT
A
im
25