BLF2022-120 NXP Semiconductors, BLF2022-120 Datasheet - Page 4

• Manufacturer Part Number: BLF2022-120
• Description: Uhf Push-pull Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Mar 07
handbook, halfpage
handbook, halfpage
UHF push-pull power LDMOS transistor
V
f
Fig.2
V
f
Fig.4
1
1
DS
DS
= 2170 MHz; f
= 2170 MHz; f
(dB)
G p
(dBc)
d im
= 2 V; I
= 2 V; I
15
10
20
40
60
80
5
0
0
30
30
Power gain and drain efficiency as functions
of average load power, typical values.
Intermodulation distortion as a function of
average load power; typical values.
DQ
d 3
d 5
d 7
DQ
= 2 x 500 mA; T
= 2 x 500 mA; T
2
2
= 2170.1 MHz.
= 2170.1 MHz.
35
35
G p
h
h
D
40
40
25 C;
25 C;
45
45
P L (AV)(W)
P L (AV)(W)
MDB155
MDB157
50
50
60
40
20
0
(%)
D
4
handbook, halfpage
V
f
Input signal: 3GPP W-CDMA 15DPCH;
Peak to average ratio: 10.27 dB (0.0001%).
Fig.3
1
DS
= 2140 MHz; f
(dB)
G p
= 2 V; I
16
12
8
4
0
20
Power gain and adjacent channel power
ratio as functions of load power; typical
values.
DQ
= 2 x 500 mA; T
2
= 2140.1 MHz.
30
h
25 C;
ACPR 10
ACPR
G p
Preliminary specification
BLF2022-120
40
P L (AV)(W)
MDB156
50
0
ACPR
(dBc)
20
40
60
80