TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 12

• Manufacturer Part Number: TPD4123K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Timing Chart of Under voltage protection
Safe Operating Area
Note 1: The above safe operating areas are Tj = 135 °C (Figure 1).
(1) Over-current protection
(2) Under voltage protection
(3) Thermal shutdown
1.0
0
LO
HO
DIAG
LIN
HIN
V
V
This product incorporates a over-current protection circuit to protect itself against over-current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the RS pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a dead time , preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
This product incorporates under voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the V
power supply reaches 0.5 V higher than the shutdown voltage (V
automatically restored and the IGBT is turned on again by the input. DIAG output is reversed at the
time of V
sometimes reversed.
When the V
When the V
the IGBT is turned on again by the input signal.
This product incorporates a thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation , all IGBT outputs shut down regardless of the input. This protection function has
hysteresis ΔTSD (=50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is
automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
0
BS
CC
Note: The above timing chart is considering the delay time
Power supply voltage V
Figure 1 SOA at Tj = 135 °C
CC
BS
BS
CC
under-voltage protection. When the V
t
supply voltage drops V
supply voltage reaches 0.5 V higher than the shutdown voltage (V
on
power supply falls to this product internal setting V
BB
t
off
450
(V)
CC
voltage or the V
t
on
BS
UVD (=9 V typ.), the high-side IGBT output shuts down.
t
off
12
BS
CC
voltage drops.
power supply is less than 7 V, DIAG output isn't
CC
UVR (=11.5 V typ.)), this product is
CC
UVD (=11 V typ.), all IGBT
R
(=0.5 V typ.), the IGBT
BS
UVR (=9.5 V typ.)),
TPD4123K
2008-05-14
CC