TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 9

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TPD4123K

Manufacturer Part Number
TPD4123K
Description
Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
TPD4123K
Quantity:
708
Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
Input current
Output saturation voltage
FRD forward voltage
BSD forward voltage
Regulator voltage
Current limiting voltage
Current limiting dead time
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output on delay time
Output off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under voltage protection
under voltage protection recovery
under voltage protection
under voltage protection recovery
Characteristics
(Ta = 25°C)
I
V
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
CC
CC
F (BSD)
V
ΔTSD
BS
BS
CEsat
DIAGsat
CEsat
t
TSD
V
V
V
V
I
V
dead
I
V
V
t
t
I
REG
CC
I
Dt
BB
t
on
off
CC
IH
F
BB
IL
F
UVD
UVR
rr
IH
UVD
UVR
IL
R
H
L
H
L
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
F
F
F
DIAG
BB
CC
BS
BS
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= 0.5 A, high side
= 0.5 A, low side
= 500 μA
= “H”, V
= “L” , V
= 5 V
= 0 V
= 450 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, V
= 280 V, V
= 280 V, V
= 280 V, V
= 15 V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V
= 15 V
= 5 mA
9
CC
CC
Test Condition
C
C
O
CC
CC
CC
CC
= 15 V
= 0.5 A, high side
= 0.5 A, low side
= 15 V
= 30 mA
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
C
C
C
C
= 0.5 A
= 0.5 A
= 0.5 A
= 0.5 A
13.5
0.46
10.5
Min
135
2.5
6.5
2.3
8.5
1.4
50
10
8
Typ.
11.5
280
230
200
200
0.9
2.4
2.4
1.5
1.5
0.9
0.5
3.3
9.5
1.4
1.0
15
50
11
7
9
TPD4123K
2008-05-14
Max
16.5
0.54
12.5
10.5
450
410
370
150
100
185
0.5
1.5
2.0
2.0
1.2
7.5
4.4
9.5
0.5
12
5
3
3
3
3
Unit
mA
μA
μA
μs
°C
°C
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V
V

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