TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 14

• Manufacturer Part Number: TPD4123K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

12.5
12.0
10.5
10.0
11.5
11.0
3.0
2.0
1.0
1.0
0.8
0.6
0.4
0.2
−50
−50
−50
0
0
V CC = 15 V
V BB = 280 V
V CC = 15 V
I C = 0.5 A
Junction temperature T
Junction temperature T
Junction temperature T
0
0
0
High-side
Low-side
V CC UVD
V CC UVR
V
CC
t
V
on
R
UV – T
50
50
50
– T
– T
j
j
j
j
j
j
100
100
100
(°C)
(°C)
(°C)
150
150
150
14
10.5
10.0
3.0
2.0
1.0
6.0
4.0
2.0
9.5
9.0
8.5
8.0
−50
−50
−50
0
0
V CC = 15 V
V BB = 280 V
V CC = 15 V
I C = 0.5 A
Junction temperature T
Junction temperature T
Junction temperature T
0
0
0
High-side
Low-side
V BS UVD
V BS UVR
V
BS
t
D
off
UV – T
t
50
50
50
– T
– T
j
j
j
j
j
j
100
100
100
(°C)
(°C)
(°C)
TPD4123K
2008-05-14
150
150
150