TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 8

• Manufacturer Part Number: TPD4123K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Absolute Maximum Ratings
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Power supply voltage
Output current (DC)
Output current (pulse)
Input voltage
V
Power dissipation (Tc = 25°C)
Operating temperature
Junction temperature
Storage temperature
REG
current
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Symbol
I
I
I
OUTp
T
V
V
T
OUT
REG
V
P
jopr
T
CC
BB
stg
(Ta = 25°C)
IN
C
j
-40 to 135
-55 to 150
-0.5 to 7
Rating
500
150
18
50
23
1
2
Unit
mA
°C
°C
°C
W
V
V
A
A
V
8
TPD4123K
2008-05-14