TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 13

• Manufacturer Part Number: TPD4123K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

3.4
3.0
2.6
2.2
1.8
1.4
1.8
1.6
1.4
1.2
1.0
2.0
1.5
1.0
0.5
−50
−50
0
12
V CC = 15 V
Control power supply voltage V
Junction temperature T
Junction temperature T
0
0
14
V
I
CEsat
CC
V
T
T
T
F
j
j
j
=−40°C
=25°C
=135°C
H – T
– V
50
50
H – T
CC
j
j
I C = 700 mA
I C = 500 mA
I C = 300 mA
I F = 700 mA
I F = 500 mA
I F = 300 mA
16
j
j
100
100
(°C)
(°C)
CC
(V)
150
150
18
13
3.4
3.0
2.6
2.2
1.8
1.4
1.8
1.6
1.4
1.2
1.0
8.0
7.5
7.0
6.5
6.0
−50
−50
12
V CC = 15 V
Control power supply voltage V
I REG = 30 mA
Junction temperature T
Junction temperature T
0
0
14
V
V
REG
CEsat
V
T
T
T
j
j
j
F
=−40°C
=25°C
=135°C
L – T
50
50
– V
L – T
CC
j
j
I C = 700 mA
I C = 500 mA
I C = 300 mA
I F = 300 mA
16
I F = 700 mA
I F = 500 mA
j
j
100
100
(°C)
(°C)
CC
TPD4123K
2008-05-14
(V)
150
150
18