2SK1167 Hitachi Semiconductor, 2SK1167 Datasheet - Page 4

• Manufacturer Part Number: 2SK1167
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1167, 2SK1168
4
150
100
50
20
16
12
0
8
4
0
Power vs. Temperature Derating
Drain to Source Voltage V
Typical Output Characteristics
Case Temperature T
10 V
4
50
8
6 V
12
100
V
Pulse Test
GS
C
5.5 V
5.0 V
4.5 V
(°C)
= 4V
DS
16
(V)
150
20
100
1.0
0.3
0.1
30
10
20
16
12
3
8
4
0
1
Operation in this area
is limited by R
Ta= 25°C
Drain to Source Voltage V
Maximum Safe Operation Area
V
Pulse Test
Gate to Source Voltage V
3
Typical Transfer Characteristics
DS
2
= 20 V
75°C
10
DS (on)
4
30
2SK1168
2SK1167
6
100
T
C
–25°C
= 25°C
DS
GS
300
8
(V)
(V)
1,000
10