2SK1167 Hitachi Semiconductor, 2SK1167 Datasheet - Page 5

• Manufacturer Part Number: 2SK1167
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

10
8
6
4
2
0
1.0
0.8
0.6
0.4
0.2
0
–40
Drain to Source Saturation Voltage
Gate to Source Voltage V
V
Pulse Test
Static Drain to Source on State
GS
4
vs. Gate to Source Voltage
Case Temperature T
Resistance vs. Temperature
0
= 10 V
8
40
I
D
= 20 A
12
80
Pulse Test
I
D
20 A
10 A
= 5 A
C
GS
16
5 A
(°C)
120
(V)
10 A
20
160
1.0
0.5
Forward Transfer Admittance vs. Drain Current
50
20
10
0.05
5
2
0.2
1.0
0.5
0.2
0.1
5
2
1
V
Pulse Test
DS
Pulse Test
0.5
= 20 V
Static Drain to Source on State
2
Resistance vs. Drain Current
Drain Current I
Drain Current I
1.0
5
2SK1167, 2SK1168
2
T
C
10
= 25°C
75°C
V
D
–25°C
GS
5
(A)
20
D
= 10 V
(A)
10
15 V
50
20
100
5