2SK1167 Hitachi Semiconductor, 2SK1167 Datasheet - Page 7

• Manufacturer Part Number: 2SK1167
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
1.0
0.3
0.1
Vin = 10 V
3
10
Vin Monitor
Switching Time Test Circuit
D = 1
0.5
50
100
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T
20
16
12
8
4
0
V
1 m
R
Source to Drain Voltage V
DD
5 V, 10 V
L
Vout Monitor
Pulse Test
0.4
= 30 V
.
Reverse Drain Current vs.
.
Source to Drain Voltage
Pulse Width PW (s)
0.8
V
GS
10 m
= 0, –10 V
1.2
t d (on)
Vout
Vin
SD
1.6
(V)
100 m
10 %
2.0
10 %
P
90 %
t r
DM
ch–c (t) =
ch–c = 1.25°C/W,T
Wavewforms
2SK1167, 2SK1168
T
PW
t d (off)
S
90 %
(t) · ch–c
1
T
C
= 25°C
D =
90 %
C
= 25°C
PW
10 %
t f
T
10
7