2SK1297 Hitachi Semiconductor, 2SK1297 Datasheet - Page 3

• Manufacturer Part Number: 2SK1297
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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Electrical Characteristics (Ta = 25
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
Symbol Min
V
V
I
V
R
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
60
r
—
—
1.0
—
—
22
—
—
—
—
—
—
—
—
—
G
20
C)
Typ
—
—
—
—
—
0.015
0.02
35
3600
1850
450
30
170
700
350
1.2
155
Max
—
—
r
250
2.0
0.018
0.025
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
P
P
V
:
:
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 10 mA, V
= 1 mA, V
= 20 A, V
= 20 A, V
= 20 A, V
= 20 A, V
= 40 A, V
= 40 A, V
=
/dt = 50 A/
= 1.5
=
= 50 V, V
= 10 V, V
r
100
r
16 V, V
:
P
A, V
GS
GS
DS
GS
GS
GS
DS
P
GS
GS
GS
= 10 V *
= 0
= 0,
= 10 V *
= 4 V *
= 10 V,
s
DS
= 10 V
DS
= 0
= 0,
2SK1297
= 0
= 0
= 0
1
1
1
3