2SK1297 Hitachi Semiconductor, 2SK1297 Datasheet - Page 4

• Manufacturer Part Number: 2SK1297
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK1297
4
500
200
100
120
50
20
10
80
40
5
0.5
0
0.05
0.04
0.03
0.02
0.01
–40
0
Power vs. Temperature Derating
Reverse Drain Current I
1.0
Body to Drain Diode Reverse
Pulse Test
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
Case Temperature T
GS
Static Drain to Source on State
V
Resistance vs. Temperature
Case Temperature T
2
= 0
GS
0
Recovery Time
50
= 4 V
V
GS
40
5
10 A, 20 A
= 10 V
I
D
= 50 A
10
100
80
C
DR
(°C)
20
10 A, 20 A
C
(A)
(°C)
120
50 A
150
50
160
10000
500
200
100
1000
1.0
0.5
1.0
0.5
50
20
10
50
10
20
100
5
2
5
2
10
0.1
0
Operation in this area
is limited by R
Drain to Source Voltage V
Maximum Safe Operation Area
1.0
0.3
Drain to Source Voltage V
Forward Transfer Admittance
Ta = 25°C
10
Drain Current I
Typical Capacitance vs.
Drain to Source Voltage
1.0
2
vs. Drain Current
20
DS (on)
3
Ciss
5
Coss
Crss
30
T
10
V
Pulse Test
D
10
–25°C
C
75°C
DS
(A)
= 25°C
= 10 V
DS
V
f = 1 MHz
30
20
DS
GS
40
(V)
= 0
(V)
100
50
50