2SK1297 Hitachi Semiconductor, 2SK1297 Datasheet - Page 5

• Manufacturer Part Number: 2SK1297
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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100
80
60
40
20
0
V
DS
Dynamic Input Characteristics
50 V
40
Gate Charge Qg (nc)
25 V
V
DD
V
80
= 10 V
DD
= 10 V
50 V
25 V
120
V
I
100
GS
D
80
60
40
20
= 40 A
0
160
Source to Drain Voltage V
Pulse Test
0.4
Reverse Drain Current vs.
200
Source to Drain Voltage
20
16
12
8
4
0
10 V
0.8
5 V
V
GS
1.2
1000
= 0, – 5 V
500
200
100
50
20
10
0.5
SD
1.6
(V)
1.0
2.0
Switching Characteristics
t
d (on)
Drain Current I
t
t
r
2
d (off)
t
f
V
PW = 2 s, duty < 1 %
GS
= 10 V V
5
10
D
DD
(A)
= 30 V
•
20
•
2SK1297
50
5