2SK1298

Manufacturer Part Number2SK1298
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1298 datasheet
 


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Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
2SK1298
TO-3PFM
D
G
1
2
3
S
1. Gate
2. Drain
3. Source

2SK1298 Summary of contents

  • Page 1

    ... Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1298 TO-3PFM Gate 2. Drain ...

  • Page 2

    ... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...

  • Page 3

    ... V — 1.2 — — 155 — rr 2SK1298 Unit Test conditions mA 100 ...

  • Page 4

    ... Power vs. Temperature Derating Case Temperature T Typical Output Characteristics 100 Drain to Source Voltage V 4 500 200 100 1.0 0.5 100 150 (°C) C 100 Pulse Test (V) DS Maximum Safe Operation Area ...

  • Page 5

    ... A 0.02 0.01 0.005 ( 1.0 120 160 0.5 1 2SK1298 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 100 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current – ...

  • Page 6

    ... Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ Pulse Test 5 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 100 Gate Charge Qg (nc) ...

  • Page 7

    ... GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin Vout . (on) 2SK1298 2 25°C C ch–c ( (t) · ch–c ch–c = 2.50°C/ 25° Wavewforms (off) ...

  • Page 8

    Max 5.45 0.5 5.5 1.6 1.4 Max 1.0 0.2 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.3 3.2 0.6 0.2 TO-3PFM — — 5.6 g ...

  • Page 9

    ... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...