2SK1298 Hitachi Semiconductor, 2SK1298 Datasheet - Page 5

• Manufacturer Part Number: 2SK1298
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.0
1.6
1.2
0.8
0.4
0
0
0.05
0.04
0.03
0.02
0.01
–40
0
Drain to Source Saturation Voltage
Gate to Source Voltage V
Pulse Test
vs. Gate to Source Voltage
2
Static Drain to Source on State
V
Resistance vs. Temperature
Case Temperature T
GS
0
= 4 V
4
V
GS
40
10 A, 20 A
= 10 V
I
D
6
= 50 A
Pulse Test
80
I
D
GS
20 A
10 A
C
10 A, 20 A
= 50 A
8
(V)
( C)
120
50 A
10
160
0.005
1.0
0.5
50
10
20
0.05
0.02
0.01
5
2
0.5
0.2
0.1
2
1.0
Forward Transfer Admittance
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain Current I
2
vs. Drain Current
Drain Current I
10
V
5
GS
20
= 4 V
T
V
Pulse Test
10
D
–25 C
C
75 C
DS
D
(A)
= 25 C
50
= 10 V
(A)
20
10 V
2SK1298
100
50
200
5