2SK1306 Hitachi Semiconductor, 2SK1306 Datasheet - Page 3

• Manufacturer Part Number: 2SK1306
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
See characteristic curves of 2SK1301.
1. Pulse test
Symbol Min
V
V
I
V
R
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
100
—
—
1.0
—
—
—
—
—
—
—
—
7
—
—
—
20
Typ
—
—
—
—
—
0.10
0.13
11
860
340
100
10
70
180
100
1.3
250
Max
—
—
250
2.0
0.13
0.18
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 15 A, V
= 15 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 8 A, V
= 8 A, V
= 8 A, V
= 8 A, V
/dt = 50 A/ s
= 3.75
= 80 V, V
= 10 V, V
= 16 V, V
GS
GS
DS
GS
GS
GS
DS
= 10 V *
= 10 V *
= 4 V *
= 10 V,
GS
GS
GS
= 0
= 0,
DS
= 10 V
2SK1306
DS
= 0
= 0,
= 0
= 0
= 0
1
1
1
3