2SK1306 Hitachi Semiconductor, 2SK1306 Datasheet - Page 4

• Manufacturer Part Number: 2SK1306
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1306
4
60
40
20
0.03
0.01
0
1.0
0.3
0.1
3
10
Power vs. Temperature Derating
D = 1
0.05
0.02
0.5
0.2
0.1
Case Temperature T
50
100
Normalized Transient Thermal Impedance vs. Pulse Width
100
C
(°C)
1 m
150
Pulse Width PW (s)
10 m
100
1.0
0.3
0.1
30
10
3
1
Ta = 25°C
Drain to Source Voltage V
100 m
Maximum Safe Operation Area
3
ch–c (t) =
ch–c = 4.17°C/W, T
P
DM
10
30
T
PW
S
(t) · ch–c
1
100
T
C
C
DS
= 25°C
D =
300
= 25°C
(V)
PW
T
1,000
10