2SK1948 Hitachi Semiconductor, 2SK1948 Datasheet

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2SK1948

Manufacturer Part Number
2SK1948
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1948
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK1948
Manufacturer:
HITACHI/日立
Quantity:
20 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low Drive Current
No Secondary Breakdown
Suitable for Switching regulator, Motor Control
Silicon N-Channel MOS FET
TO-3PL
G
2SK1948
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

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2SK1948 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline 2SK1948 TO-3PL Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS V GSS ...

Page 3

... V — 1.2 — — 450 — rr 2SK1948 Unit Test conditions mA 100 200 ...

Page 4

... Power vs. Temperature Derating 300 200 100 0 50 Case Temperature Tc (°C) Typical Output Characteristics 100 Drain to Source Voltage V 4 1000 300 100 0.3 0.1 100 150 50 Pulse Test 5 3 ...

Page 5

... Pulse Test 0.2 0.1 0.05 0.02 0.01 0.005 2 20 (V) Forward Transfer Admittance 100 Pulse Test 25° –25° 0.5 1 120 160 2SK1948 100 200 Drain Current I (A) D vs. Drain Current = 10 V 75° Drain Current I ( ...

Page 6

... Body to Drain Diode Reverse Recovery Time 5000 2000 di/dt = 100 25°C 1000 500 200 100 Reverse Drain Current I Dynamic Input Characteristics 500 200 V 400 DD 100 300 V DS 200 V = 200 V 100 DD 100 160 240 ...

Page 7

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.2 0.1 0.03 0.01 10 100 Reverse Drain Current vs. Source to Drain Voltage Pulse Test –5 V 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) 2SK1948 2 ch–c (t) = (t) · ch–c S ch–c = 0.625 C/ ...

Page 8

... Switching Time Test Circuit Vin Monitor D.U.T. Vin Vout Monitor Vin 10 10% Vout . = (on) Waveforms 90% 10% 90% 90 (off ...

Page 9

Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-3PL — — 9.9 g ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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