2SK1948 Hitachi Semiconductor, 2SK1948 Datasheet - Page 5

• Manufacturer Part Number: 2SK1948
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

5
4
3
2
1
0
0.16
0.12
0.08
0.04
Drain to Source Saturation Voltage
0.2
Gate to Source Voltage V
0
–40
vs. Gate to Source Voltage
4
Static Drain to Source on State
V
Pulse Test
Resistance vs. Temperature
Case Temperature T (°C)
GS
0
= 10 V
8
40
Pulse Test
12
I = 10 A
D
80
50 A
20 A
GS
16
10 A, 20 A
C
I = 50 A
120
(V)
D
20
160
0.005
100
0.05
0.02
0.01
50
20
10
0.5
0.2
0.1
5
2
1
0.5
2
Forward Transfer Admittance
Pulse Test
Static Drain to Source on State
V
Pulse Test
1
Tc = 25°C
–25°C
Resistance vs. Drain Current
DS
Drain Current I
5
Drain Current I
vs. Drain Current
= 10 V
2
10
V
GS
5
20
= 10 V
10
D
D
(A)
50 100 200
(A)
20
75°C
2SK1948
50
5