2SK1948 Hitachi Semiconductor, 2SK1948 Datasheet - Page 7

• Manufacturer Part Number: 2SK1948
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
0.3
0.1
3
1
10
D = 1
0.5
0.2
100
Normalized Transient Thermal Impedance vs. Pulse Width
50
40
30
20
10
0
Source to Drain Voltage V
1 m
Pulse Test
V
GS
Reverse Drain Current vs.
0.4
Source to Drain Voltage
= 10 V
Pulse Width PW (s)
0.8
10 m
1.2
0, –5 V
1.6
SD
(V)
100 m
2.0
ch–c (t) =
ch–c = 0.625 C/W, T
P
DM
T
PW
S
1
(t) · ch–c
T
C
= 25 C
2SK1948
C
D =
= 25 C
PW
T
10
7