2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet - Page 5

• Manufacturer Part Number: 2SK2926
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

0.20
0.16
0.12
0.08
0.04
2.0
1.6
1.2
0.8
0.4
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
Case Temperature
10 V
GS
4
0
Gate to Source Voltage
= 4 V
vs. Temperature
40
8
I
20 A 10 A
12
80
D
= 10 A
I
D
Tc
Pulse Test
= 20 A
V
120
16
10 A
GS
5 A
( C)
5 A
(V)
5 A
160
20
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0.5
20
10
Static Drain to Source on State Resistance
5
2
1
0.1 0.2
1
Forward Transfer Admittance vs.
2SK2926(L), 2SK2926(S)
2
Drain Current I
V
Drain Current
Tc = –25 C
GS
0.5
vs. Drain Current
Drain Current
5
= 4 V
10 V
75 C
1
10
2
25 C
20
I
D
V
Pulse Test
D
DS
Pulse Test
(A)
5
(A)
= 10 V
50
10
100
20
5