2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet - Page 6

• Manufacturer Part Number: 2SK2926
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK2926(L), 2SK2926(S)
6
500
200
100
100
50
20
10
80
60
40
20
5
0.1
0
V
I
DS
Reverse Drain Current
D
0.2
Dynamic Input Characteristics
Body to Drain Diode Reverse
= 15A
8
Gate Charge
0.5
V
Recovery Time
DD
V
16
di / dt = 50 A / s
V
GS
= 50 V
1
GS
25 V
10 V
= 0, Ta = 25 C
2
24
V
Qg (nc)
DD
I
= 10 V
5
DR
25 V
50 V
32
10
(A)
400
20
20
16
12
8
4
0
2000
1000
1000
500
200
100
300
100
50
20
10
30
10
3
1
0.1
0
V
f = 1 MHz
Drain to Source Voltage V
GS
0.2
10
Switching Characteristics
= 0
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
0.5
t f
V
PW = 5 s, duty < 1 %
GS
20
t
1
d(off)
= 10 V, V
r t
2
30
I
D
t
DD
d(on)
Coss
5
Ciss
(A)
Crss
40
DS
= 30 V
10
(V)
20
50