2SJ541 Hitachi Semiconductor, 2SJ541 Datasheet

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2SJ541

Manufacturer Part Number
2SJ541
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ541
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current.
4V gate drive devices.
High speed switching.
DS(on)
= 0.075 typ.
G
TO–220AB
High Speed Power Switching
Silicon P Channel MOS FET
D
S
2SJ541
1
2
3
1. Gate
2. Drain
3. Source
(Flange)
ADE-208-590B (Z)
3rd. Edition
Jun 1998

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2SJ541 Summary of contents

Page 1

... Features Low on-resistance R = 0.075 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline TO–220AB G 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B (Z) 1. Gate 2. Drain (Flange Source 3rd. Edition Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Maximum Safe Operation Area 3 Operation in 1 this area is limited by R DS(on °C 3 0.1 0 Drain to Source Voltage V Typical Transfer Characteristics V = – Pulse Test 25° 75°C –25°C 0 –1 –2 –3 Gate to Source Voltage V 2SJ541 10 µs 30 100 (V) DS –4 –5 ( ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –4.0 –3.2 –2.4 –1.6 –0.8 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.40 Pulse Test 0. – 0.08 – – Case Temperature 4 Pulse Test I = – –10 A 0.03 –5 A 0.01 – ...

Page 5

... Drain to Source Voltage 1000 µs, duty < 500 –4 200 –8 100 –12 50 –16 20 – –0.1 –0.2 2SJ541 Typical Capacitance vs. Drain to Source Voltage = 0 Ciss Coss Crss –10 –20 –30 –40 –50 (V) DS Switching Characteristics = – – d(off ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –20 –16 –10 V –5 V –12 –8 –4 0 –0.4 –0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – Pulse Test 0 –1.2 –1.6 –2 ( Monitor D ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – – c( (t) • ch – 2.5 °C/ ° 100 m Pulse Width PW (S) Vout Vin Monitor –30 V Vout td(on) 2SJ541 Tc = 25°C ch – Waveform 10% 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 10.16±0.2 9.5 8.0 1.2±0.1 1.27±0.1 1.5 max 0.76 ±0.1 2.54 ±0.5 2.54 ±0 0.1 4.44±0.2 f 3.6 – 0.08 1.26±0.15 0.5±0.1 2.7 max Unit: mm Hitachi Code TO–220AB SC–46 EIAJ — JEDEC ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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