2SJ541 Hitachi Semiconductor, 2SJ541 Datasheet - Page 4

• Manufacturer Part Number: 2SJ541
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ541
4
–4.0
–3.2
–2.4
–1.6
–0.8
0.40
0.32
0.24
0.16
0.08
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
V
Gate to Source Voltage
GS
Case Temperature
–4
0
Gate to Source Voltage
= –4 V
–10 V
vs. Temperature
I
–8
40
D
= –15 A
–12
80
–5, –10, –15 A
I
D
–10 A –5 A
Tc
Pulse Test
= –15 A
V
–16
120
–10 A
GS
–5 A
(°C)
(V)
–20
160
0.03
0.01
100
0.3
0.1
0.3
0.1
10
30
10
Static Drain to Source on State Resistance
3
1
–0.1
3
1
–0.1
Pulse Test
Forward Transfer Admittance vs.
–0.3
–0.3
Tc = –25 °C
Drain Current I
Drain Current
75 °C
vs. Drain Current
V
–1
–1
Drain Current
GS
= –4 V
–10 V
–3
–3
25 °C
–10
–10
I
D
V
Pulse Test
D
DS
(A)
(A)
–30
= –10 V
–30
–100
–100