2SJ541 Hitachi Semiconductor, 2SJ541 Datasheet - Page 3

• Manufacturer Part Number: 2SJ541
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–20
–16
–12
80
60
40
20
–8
–4
0
0
–10 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–2
–6 V
50
–4
100
V
GS
–6
= –2.5 V
–3.5 V
Tc (°C)
Pulse Test
150
V
–4 V
–3 V
–8
DS
(V)
200
–10
1000
300
100
–20
–16
–12
0.3
0.1
30
10
–8
–4
3
1
0
0.1
Ta = 25 °C
Drain to Source Voltage
V
Pulse Test
Gate to Source Voltage
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
–1
= –10 V
Operation in
this area is
limited by R
Tc = 75°C
1
–2
3
DS(on)
–3
10
–25°C
25°C
V
V
GS
10 µs
DS
–4
30
(V)
(V)
2SJ541
100
–5
3