MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet - Page 14

• Manufacturer Part Number: MRF6S9060
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
14
aaa
D
M
A1
D
NOTE 7
A2
PIN 2
A
c1
aaa
2X
b1
D2
H
M
DATUM
PLANE
D
B
PIN 3
A
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
BOTTOM VIEW
ZONE J
F
E5
PACKAGE DIMENSIONS
E1
2X
E4
E5
E3
E2
2X
E
MRF6S9060NR1(MR1)
CASE 1265 - 08
TO - 270- 2
PLASTIC
ISSUE H
D3
HEATSINK AREA
2X
D
EXPOSED
D1
PIN 1
A
A
PIN ONE ID
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
6. DATUMS −A− AND −B− TO BE DETERMINED AT
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
PER ASME Y14.5M−1994.
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DATUM PLANE −H−.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
STYLE 1:
DIM
aaa
A1
A2
D1
D2
D3
E1
E2
E3
E4
E5
b1
c1
A
D
E
F
PIN 1. DRAIN
2. GATE
3. SOURCE
MIN
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
.193
.007
.025 BSC
INCHES
.004
MAX
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
.199
.011
Freescale Semiconductor
10.57
11.07
MILLIMETERS
MIN
1.98
0.99
1.02
9.60
7.37
0.41
6.04
1.68
3.81
1.47
5.87
4.90
0.18
0.64 BSC
0.10
10.77
MAX
11.28
RF Device Data
2.08
1.09
1.07
9.70
8.13
0.61
6.15
1.88
4.57
1.68
5.97
5.06
0.28