MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet - Page 3

• Manufacturer Part Number: MRF6S9060
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
V
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) V
I
DQ
DD
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
= 500 mA, P
(f = 940 MHz)
= 28 Vdc, I
@ 1 dB Compression Point
DQ
out
= 500 mA, P
= 60 W, f = 921 - 960 MHz
Characteristic
out
= 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
(T
C
= 25°C unless otherwise noted)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
(continued)
Symbol
P1dB
EVM
SR1
SR2
G
G
IRL
η
η
ps
ps
D
D
Min
—
—
—
—
—
—
—
—
—
Typ
- 62
- 78
- 12
1.5
20
46
20
63
67
DD
= 28 Vdc,
Max
—
—
—
—
—
—
—
—
—
Unit
dBc
dBc
dB
dB
dB
W
%
%
%
3