MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet - Page 7

• Manufacturer Part Number: MRF6S9060
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
−50
−60
−70
−80
−10
−20
−30
−40
1
Figure 7. Intermodulation Distortion Products
V
f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
7th Order
3rd Order
5th Order
DD
= 28 Vdc, I
P
out
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 450 mA, f1 = 880 MHz
10
55
45
35
25
15
−5
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
5
1
56
55
54
53
52
51
50
49
48
47
46
45
44
22
V
f = 880 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
Gain and Drain Efficiency versus Output Power
G
DD
ps
= 28 Vdc, I
P1dB = 49.1 dBm (100 W)
23
Figure 9. Pulse CW Output Power versus
TYPICAL CHARACTERISTICS
T
24
C
100
P
= 25_C
out
DQ
, OUTPUT POWER (WATTS) AVG.
25
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
= 450 mA
P3dB = 50 dBm (150 W)
P
26
in
, INPUT POWER (dBm)
300
Input Power
27
V
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
85_C
DD
28
= 28 Vdc, I
10
29
−10
−20
−30
−40
−50
−60
−70
25_C
−30_C
0
0.05
25_C
30
Figure 8. Intermodulation Distortion Products
DQ
V
I
Center Frequency = 880 MHz
7th Order
DQ
5th Order
3rd Order
DD
0.1
= 450 mA
25_C
= 450 mA, Two −Tone Measurements
31
= 28 Vdc, P
−30_C
η
85_C
D
32
ACPR
ALT1
Actual
Ideal
33
out
versus Tone Spacing
TWO −TONE SPACING (MHz)
= 60 W (PEP)
−25
−35
−45
−55
−65
−75
−85
1
34
10
100
300
7