MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet - Page 2

• Manufacturer Part Number: MRF6S9060
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
2
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 200 µA)
= 450 mAdc)
= 3 Adc)
= 1.5 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
g
η
= 450 mA, P
3
oss
iss
rss
fs
ps
D
Symbol
R
20.5
30.5
Min
Package Peak Temperature
out
—
—
—
—
—
—
—
—
—
—
—
θJC
1
= 14 W Avg., f = 880 MHz, Single - Carrier
- 47.6
- 15.3
0.18
21.4
32.1
260
Typ
106
2.9
4.2
1.4
33
—
—
—
2
1A (Minimum)
IV (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
0.77
0.88
(1,2)
Max
23.5
- 45
0.4
10
—
—
—
—
—
—
- 9
1
1
3
RF Device Data
°C/W
µAdc
µAdc
µAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%
S