IPD053N08N3G Infineon Technologies, IPD053N08N3G Datasheet - Page 6

• Manufacturer Part Number: IPD053N08N3G
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
12
10
DS
=f(T
8
6
4
2
0
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=90 A; V
20
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
j
DS
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
20
175 °C
90 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
25 °C, 98%
900 µA
IPD053N08N3 G
100
1.5
140
175 °C, 98%
2008-01-25
180
2