IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet
IPB034N03LG
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IPB034N03LG Summary of contents
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Type ™ OptiMOS 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R • Very low on-resistance R • Avalanche ...
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Maximum ratings Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter 160 120 Typ. transfer characteristics I =f |>2|I ...
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Drain-source on-state resistance DS(on -60 -20 11 Typ. capacitances C =f MHz DS GS ...
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Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline Footprint: www.DataSheet4U.com Rev. 2.0 PG-TO220-3-1 Packaging: page 8 IPP034N03L G IPB034N03L G 2010-02-19 ...
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Package Outline www.DataSheet4U.com Rev. 2.0 PG-TO263-3 page 9 IPP034N03L G IPB034N03L G 2010-02-19 ...
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... Infineon Technologies AG 81726 München, Germany 81726 München, Germany 81726 München, Germany 81726 München, Germany © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. All Rights Reserved. All Rights Reserved. All Rights Reserved. All Rights Reserved. ...