IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet - Page 7

• Manufacturer Part Number: IPB034N03LG
• Description: OptiMOS3 Power-Transistor
• Manufacturer: Infineon Technologies AG

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Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
34
32
30
28
26
24
22
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
0
20
150 ° C
t
T
AV
100 ° C
j
10
60
[°C]
[µs]
1
25 ° C
100
10
2
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
10
=30 A pulsed
g s
20
Q
Q
gate
g
Q
30
sw
[nC]
Q
g d
40
IPB034N03L G
IPP034N03L G
6 V
50
15 V
24 V
Q
g ate
2010-02-19
60