IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet - Page 4

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IPB034N03LG

Manufacturer Part Number
IPB034N03LG
Description
OptiMOS3 Power-Transistor
Manufacturer
Infineon Technologies AG
Datasheet
www.DataSheet4U.com
Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 ° C; D =0
50
10
DC
0
T
V
C
DS
100
[°C]
[V]
10
100 µs
1
1 ms
10 ms
10 µs
150
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
10
); V
p
0
0
)
-6
0.02
0.01
0.5
0.2
0.05
0.1
GS
≥10 V
single pulse
10
p
0
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPB034N03L G
IPP034N03L G
0
-2
150
10
0
-1
2010-02-19
200
10
1
0

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