psmn017-30kl NXP Semiconductors, psmn017-30kl Datasheet - Page 7

• Manufacturer Part Number: psmn017-30kl
• Description: N-channel 30 V 17 M Logic-level Mosfet In So8
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN017-30KL
Objective data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(A)
I
D
16
12
8
4
0
function of drain-source voltage; typical values
T
Output characteristics: drain current as a
0
j
Characteristics
10
= 25°C
4.5
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
3.5
0.5
3.0
…continued
1
1.5
V
GS
All information provided in this document is subject to legal disclaimers.
003aag017
(V) = 2.2
V
DS
(V)
2.6
2.4
2.8
Conditions
V
R
I
see
I
V
2
S
S
Rev. 01 — 14 April 2011
DS
GS
G(ext)
= 5 A; V
= 5 A; dI
Figure 17
= 15 V; R
= 0 V; V
= 4.7 Ω; T
GS
S
/dt = 100 A/µs;
DS
Fig 6.
= 0 V; T
L
N-channel 30 V 17 mΩ logic-level MOSFET in SO8
= 0.5 Ω; V
= 15 V
j
= 25 °C
(A)
I
D
16
12
8
4
0
j
function of gate-source voltage; typical values
V
Transfer characteristics: drain current as a
= 25 °C;
0
DS
GS
= 10 V
= 4.5 V;
1
T
j
= 150 ° C
PSMN017-30KL
Min
-
-
-
-
-
-
-
2
T
j
Typ
12
8
12
4
0.82
16
9
= 25 ° C
3
© NXP B.V. 2011. All rights reserved.
003aag018
V
GS
Max
-
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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