mrfe6p3300h

Manufacturer Part Numbermrfe6p3300h
DescriptionRf Power Field Effect Transistor
ManufacturerFreescale Semiconductor, Inc
mrfe6p3300h datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common - source amplifier
applications in 32 volt analog or digital television transmitter equipment.
• Typical Narrowband Two - Tone Performance @ 860 MHz: V
I
= 1600 mA, P
= 270 Watts PEP
DQ
out
Power Gain — 20.4 dB
Drain Efficiency — 44.8%
IMD — - 28.8 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Designed for Push - Pull Operation Only
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
= 32 Volts,
DD
Operation
DD
Document Number: MRFE6P3300H
Rev. 0, 5/2007
MRFE6P3300HR3
MRFE6P3300HR5
860 MHz, 300 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Symbol
Value
Unit
V
- 0.5, +66
Vdc
DSS
V
- 0.5, +12
Vdc
GS
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
0.23
0.24
0.27
0.27
MRFE6P3300HR3 MRFE6P3300HR5
1

mrfe6p3300h Summary of contents

  • Page 1

    ... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 32 Volts, DD Operation DD Document Number: MRFE6P3300H Rev. 0, 5/2007 MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 860C3 ...

  • Page 2

    ... Input Return Loss 1. Each side of the device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. 4. Drains are tied together internally as this is a total device value. MRFE6P3300HR3 MRFE6P3300HR5 2 = 25°C unless otherwise noted) C Symbol ...

  • Page 3

    ... Microstrip 0.165″ x 0.339″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, ε = 2.5 r Part Number Manufacturer Fair - Rite Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Micro - Coax Vishay Vishay MRFE6P3300HR3 MRFE6P3300HR5 V SUPPLY RF OUTPUT V SUPPLY 3 ...

  • Page 4

    ... COAX1 C4 C5 COAX2 Figure 2. 820 - 900 MHz Narrowband Test Circuit Component Layout MRFE6P3300HR3 MRFE6P3300HR5 4 C23 C14 C12 C6 C10 C11 C13 C24 C15 C18 V DD C16 C17 COAX3 COAX4 C20 C21 V DD C22 C19 RF Device Data ...

  • Page 5

    ... Vdc 857 MHz 863 MHz I = 800 mA DQ 1200 mA 2400 mA 2000 mA 1600 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRFE6P3300HR3 MRFE6P3300HR5 600 5 ...

  • Page 6

    ... P , OUTPUT POWER (WATTS) PEP out Figure 7. Intermodulation Distortion Products versus Output Power MRFE6P3300HR3 MRFE6P3300HR5 6 − Two −Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 860 MHz IM3 −L −30 −40 −50 −60 −70 100 600 1 Figure 8. Intermodulation Distortion Products P6dB = 56 ...

  • Page 7

    ... MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 13. MTTF versus Junction Temperature I = 1600 860 MHz DD 50 100 150 200 250 300 P , OUTPUT POWER (WATTS) CW out 210 230 250 = 44.8%. D MRFE6P3300HR3 MRFE6P3300HR5 350 400 7 ...

  • Page 8

    ... Mode DVTB OFDM 64 QAM Data Carrier Modulation 0.01 5 Symbols 0.001 0.0001 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier DVTB OFDM MRFE6P3300HR3 MRFE6P3300HR5 8 DIGITAL TEST SIGNALS −20 −30 −40 −50 −60 −70 −80 −90 20 kHz BW −100 −110 −5 −4 Figure 15 ...

  • Page 9

    ... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under Matching Test Network − source Z load Ω Output − Matching Network + load MRFE6P3300HR3 MRFE6P3300HR5 9 ...

  • Page 10

    ... (LID (INSULATOR bbb bbb M ccc E H (INSULATOR) bbb A MRFE6P3300HR3 MRFE6P3300HR5 10 PACKAGE DIMENSIONS bbb (FLANGE (LID SEATING PLANE ...

  • Page 11

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 May 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6P3300HR3 MRFE6P3300HR5 11 ...

  • Page 12

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6P3300HR3 MRFE6P3300HR5 Document Number: MRFE6P3300H Rev. 0, 5/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...