mrf7s21150h Freescale Semiconductor, Inc, mrf7s21150h Datasheet - Page 6

• Manufacturer Part Number: mrf7s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21150HR3 MRF7S21150HSR3
6
19
18
17
16
15
14
13
1
1010 mA
1690 mA
1350 mA
675 mA
Figure 5. Two - Tone Power Gain versus
P
out
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
I
DQ
Output Power
10
= 2020 mA
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
17.5
16.5
15.5
14.5
13.5
17.5
16.5
15.5
14.5
13.5
18
17
16
15
14
13
18
17
16
15
14
13
2060
2060
PARC
Broadband Performance @ P
Broadband Performance @ P
G
D
D
ps
2080
2080
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
DD
IRL
PARC
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
IRL
DD
= 28 Vdc, P
TYPICAL CHARACTERISTICS
100
2100
2100
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2120
2120
out
out
= 44 W (Avg.), I
300
= 75 W (Avg.), I
G
ps
2140
2140
2160
2160
DQ
out
out
DQ
−10
−20
−30
−40
−50
−60
= 1350 mA
= 1350 mA
= 44 Watts Avg.
= 75 Watts Avg.
2180
2180
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
I
DQ
1010 mA
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
2200
2200
= 675 mA
P
2020 mA
out
2220
2220
1350 mA
, OUTPUT POWER (WATTS) PEP
versus Output Power
33
32
31
30
29
0
−0.5
−1
−1.5
−2
−2.5
42
41
40
39
38
37
−2.5
−3
−3.5
−4
−4.5
10
−4
−8
−12
−16
−20
−24
−5
−10
−15
−20
−25
Freescale Semiconductor
1690 mA
RF Device Data
100
300