mrf7s21150h Freescale Semiconductor, Inc, mrf7s21150h Datasheet - Page 8

• Manufacturer Part Number: mrf7s21150h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21150HR3 MRF7S21150HSR3
8
18
17
16
15
14
0.0001
0.001
0.01
0
100
0.1
10
1
Figure 12. Power Gain versus Output Power
64 DPCH, 50% Clipping, Single - Carrier Test Signal
0
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
P
out
Compressed Output
Signal @ 44 W P
2
, OUTPUT POWER (WATTS) CW
100
PEAK−TO−AVERAGE (dB)
V
DD
= 24 V
4
out
28 V
200
6
I
f = 2140 MHz
DQ
Input Signal
TYPICAL CHARACTERISTICS
32 V
= 1350 mA
W - CDMA TEST SIGNAL
8
300
10
−100
−110
10
10
10
10
−10
−20
−30
−40
−50
−60
−70
−80
−90
8
7
6
5
90
−9
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
Figure 15. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
130
T
J
DD
, JUNCTION TEMPERATURE ( C)
−3.6
= 28 Vdc, P
f, FREQUENCY (MHz)
150
−1.8
Channel BW
3.84 MHz
out
170
= 44 W Avg., and
0
Freescale Semiconductor
1.8
190
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
D
5.4
= 31%.
230
7.2
250
9