tc1102p0912 Transcom, Inc., tc1102p0912 Datasheet

tc1102p0912

Manufacturer Part Number

tc1102p0912

Description

Super Low Noise Gaas Fets

Manufacturer

Transcom, Inc.

Datasheet

1.TC1102P0912.pdf (4 pages)

Current page: 1 of 4
Download datasheet (182Kb)

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups:

TRANSCOM, INC.,

Web-Site:

! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

! High Associated Gain: Ga = 13 dB Typical at 12 GHz

! Lg = 0.25 m, Wg = 160 m

! All-Gold Metallization for High Reliability

! 100 % DC Tested

The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has

very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and

suitable for low noise application including a wide range of commercial and military applications. All

devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either

thermo-compression or thermo-sonic wire bonding.

Symbol

(1) TC1102P0710 : Vp = -0.7V to -1.0V (2) TC1102P0811 : Vp = -0.8V to -1.1V (3) TC1102P0912 : Vp = -0.9V to -1.2V

In addition, the customers may specify their requirements.

DSS

Tight Vp ranges control

High RF input power handling capability

DGO

www.transcominc.com.tw

Noise Figure at V

Associated Gain at V

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

90 Dasoong 7

= 2 V, I

= 2 V, V

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

= 10 mA

= 10 mA, f = 12GHz

= 0.32 mA

Super Low Noise GaAs FETs

DGO

= 0 V

Conditions

= 2 V, V

=0.08 mA

, f = 12GHz

Phone: 886-6-5050086

=25 C)

= 0 V

1/4

Fax: 886-6-5051602

PHOTO ENLARGEMENT

MIN

-1.0*

TYP

225

0.5

REV5_20070502

TC1102

MAX

0.7

UNIT

Volts

C/W

Related parts for tc1102p0912

tc1102p0912 Summary of contents

Page 1

... DGO R Thermal Resistance th Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups: (1) TC1102P0710 : Vp = -0.7V to -1.0V (2) TC1102P0811 : Vp = -0.8V to -1.1V (3) TC1102P0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. TRANSCOM, INC Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. ...

Page 2

... T Storage Temperature STG CHIP DIMENSIONS 280 ± ± ± ± Units: Micrometers Chip Thickness: 100 TRANSCOM, INC Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw =25 C) TYPICAL NOISE PARAMETERS ( ...

Page 3

... The data does not include gate, drain and source bond wires. TRANSCOM, INC Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw = Swp Max Mag Max 0.15 18GHz -180 Swp Min 0 ...

Page 4

... HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R ...

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