tc1201v Transcom, Inc., tc1201v Datasheet

tc1201v

Manufacturer Part Number

tc1201v

Description

Low Noise And Medium Power Gaas Fets

Manufacturer

Transcom, Inc.

Datasheet

1.TC1201V.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC1201V

Manufacturer:

RFMD

Quantity:

5 000

Current page: 1 of 2
Download datasheet (120Kb)

FEATURES

! Via holes for source grounding

! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

! High Associated Gain: Ga = 13 dB Typical at 12 GHz

! High Dynamic Range: 1 dB Compression Power P

! Breakdown Voltage: BV

! Lg = 0.25 m, Wg = 300 m

! All-Gold Metallization for High Reliability

! Tight Vp ranges control

! High RF input power handling capability

! 100 % DC Tested

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups:

TRANSCOM, INC.,

Web-Site:

The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The

device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable

for low noise and medium power amplifier application including a wide range of commercial and military

application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either

thermo-compression or thermo-sonic wire bonding.

(1) TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V

(3)TC1201VP0912 : Vp = -0.9V to -1.2V

In addition, the customers may specify their requirements.

40 mA and 12 GHz

Symbol

DSS

1dB

DGO

www.transcominc.com.tw

Noise Figure at V

Associated Gain at V

Output Power at 1dB Gain Compression Point, f = 12GHz V

Linear Power Gain, f = 12GHz V

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

90 Dasoong 7

= 4 V, I

Low Noise and Medium Power GaAs FETs

DGO

= 4 V, I

= 2 V, I

= 2 V, V

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

9 V

= 25 mA, f = 12GHz

= 0.6 mA

DGO

= 0 V

= 6 V, I

Conditions

= 2 V, V

=0.15 mA

Phone: 886-6-5050086

=25 C)

= 40 mA

= 0 V

-1

1 / 2

= 21.5 dBm at 6 V,

= 6 V, I

= 40 mA

Fax: 886-6-5051602

PHOTO ENLARGEMENT

MIN

20.5

-1.0*

TYP

21.5

100

0.5

TC1201V

REV5_20070502

MAX

0.7

UNIT

Volts

dBm

C/W

Related parts for tc1201v

tc1201v Summary of contents

Page 1

... DC Tested DESCRIPTION The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application ...

Page 2

... Rating Frequency (GHz DSS 6 300 dBm 10 400 mW 12 175 +175 250 ! Phone: 886-6-5050086 TC1201V REV5_20070502 = Γ opt opt A (dB) (dB) MAG ANG 0.36 20.2 0.96 14 0.38 18.5 0.83 31 0.40 16.7 0.67 51 0.43 15.2 0.51 76 0.50 13.8 0.37 108 0.56 12.7 0.28 147 ...

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