tc1201v Transcom, Inc., tc1201v Datasheet
tc1201v
Manufacturer Part Number
tc1201v
Description
Low Noise And Medium Power Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet
1.TC1201V.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC1201V
Manufacturer:
RFMD
Quantity:
5 000
FEATURES
! Via holes for source grounding
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 13 dB Typical at 12 GHz
! High Dynamic Range: 1 dB Compression Power P
! Breakdown Voltage: BV
! Lg = 0.25 m, Wg = 300 m
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The
device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable
for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
(1) TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V
(3)TC1201VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
40 mA and 12 GHz
Symbol
BV
P
I
NF
G
V
R
G
g
DSS
1dB
m
DGO
th
a
L
P
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
90 Dasoong 7
DS
= 4 V, I
Low Noise and Medium Power GaAs FETs
DGO
DS
DS
DS
= 4 V, I
th
= 2 V, I
= 2 V, V
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
DS
9 V
= 25 mA, f = 12GHz
DS
D
= 25 mA, f = 12GHz
GS
= 0.6 mA
DS
DGO
= 0 V
DS
= 6 V, I
Conditions
= 2 V, V
=0.15 mA
Phone: 886-6-5050086
A
=25 C)
DS
= 40 mA
GS
= 0 V
-1
1 / 2
= 21.5 dBm at 6 V,
DS
= 6 V, I
DS
= 40 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
20.5
11
11
9
-1.0*
TYP
21.5
100
0.5
13
12
90
12
96
TC1201V
REV5_20070502
MAX
0.7
UNIT
Volts
Volts
dBm
mA
C/W
mS
dB
dB
dB
Related parts for tc1201v
tc1201v Summary of contents
Page 1
... DC Tested DESCRIPTION The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application ...
Page 2
... Rating Frequency (GHz DSS 6 300 dBm 10 400 mW 12 175 +175 250 ! Phone: 886-6-5050086 TC1201V REV5_20070502 = Γ opt opt A (dB) (dB) MAG ANG 0.36 20.2 0.96 14 0.38 18.5 0.83 31 0.40 16.7 0.67 51 0.43 15.2 0.51 76 0.50 13.8 0.37 108 0.56 12.7 0.28 147 ...