tc1201v Transcom, Inc., tc1201v Datasheet - Page 2

• Manufacturer Part Number: tc1201v
• Description: Low Noise And Medium Power Gaas Fets
• Manufacturer: Transcom, Inc.

ABSOLUTE MAXIMUM RATINGS (T
CHIP DIMENSIONS
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290 C ±5 C ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220 C to 250 C ; Bond Tip Temperature : 150 C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC.,
Web-Site:
Symbol
T
V
V
T
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
www.transcominc.com.tw
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Parameter
S
90 Dasoong 7
D
G
th
430
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
- 65
S
!
400 mW
300 A
21 dBm
C
12
Rating
175
-3.0 V
7.0 V
I
to +175
DSS
C
G
Phone: [phone]
D
A
=25 C) TYPICAL NOISE PARAMETERS (T
C
S
2 / 2
V
DS
Frequency
= 4 V, I
(GHz)
10
12
14
16
18
2
4
6
8
250
DS
!
= 25 mA
12
NF
(dB)
0.36
0.38
0.40
0.43
0.50
0.56
0.66
0.83
1.03
opt
Fax: [phone]
(dB)
20.2
18.5
16.7
15.2
13.8
12.7
12.1
12.0
12.2
G
A
Source Pad: 55 x 65
Units: Micrometers
Chip Thickness: 55
Drain Pad: 55 x 50
Gate Pad: 55 x 50
MAG
0.96
0.83
0.67
0.51
0.37
0.28
0.25
0.31
0.49
Γ
TC1201V
opt
REV5_20070502
ANG
-166
-108
108
147
-41
14
31
51
76
A
=25 C)
Rn/50
0.59
0.50
0.39
0.28
0.17
0.13
0.11
0.15
0.34