is62wv12816bll-55b2i Integrated Silicon Solution, Inc., is62wv12816bll-55b2i Datasheet - Page 4

• Manufacturer Part Number: is62wv12816bll-55b2i
• Description: 128k X 16 Low Voltage, Ultra Low Power Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS62WV12816ALL,
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Symbol
V
V
V
V
I
I
Symbol
C
C
LO
LI
OH
OL
IL
IH
IL (1)
IN
OUT
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Input Capacitance
Input/Output Capacitance
(1)
IS62WV12816BLL
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
Integrated Silicon Solution, Inc. — www.issi.com —
(Over Operating Range)
OUT
IN
Conditions
V
V
≤ V
OUT
IN
≤ V
DD
= 0V
= 0V
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
V
DD
Max.
10
8
Min.
–0.2
–0.2
1.4
2.2
1.4
2.2
–1
–1
—
—
Unit
pF
pF
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
—
—
1
1
+ 0.2
+ 0.3
ISSI
1-800-379-4774
Unit
07/18/06
µA
µA
Rev. G
V
V
V
V
V
V
V
V
®